********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Jul 14, 2014
*ECN S14-1429, Rev. B
*File Name: Si2399DS_PS.txt and Si2399DS_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si2399DS D G S 
M1 3 GX S S PMOS W= 1485600u L= 0.25u 
M2 S GX S D NMOS W= 1485600u L= 4.379e-07 
R1 D 3 1.019e-03 TC=8.648e-02 -1.266e-04 
CGS GX S 2.906e-10 
CGD GX D 4.357e-11 
RG G GY 4.4
RTCV 100 S 1e6 TC=-5.218e-04 1.572e-07 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 
+ RS = 2.560e-02 KP = 6.62e-06 NSUB = 7.525e+15
+ KAPPA = 1.01764e-02 ETA = 4.317e-06 NFS = 1.348e+12 
+ LD = 0 IS = 0 TPG = -1) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 3e-8 
+NSUB = 3.469e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.000e-08 T_MEASURED = 25 BV = 21 
+RS = 1.881e-02 N = 1.635e+00 IS = 1.000e-07 
+EG = 8.867e-01 XTI = 3.971e+00 TRS1 = 1.000e-05 
+CJO = 1.520e-10 VJ = 3.000e-01 M = 2.157e-01 ) 
.ENDS 
